Efeito da posição e da corrente elétrica nas propriedades de filmes de AZO depositados por magnetron sputtering DC sem recozimento e aplicação de filme finos de TiO2

Abstract

Aluminum-doped zinc oxide (AZO) has important applications in the opticalelectronic area. Among the various techniques for obtaining thin films, magnetron sputtering is well suited for uniform and dense films. Aluminum-doped ZnO films were deposited on glass substrate by magnetron sputtering at a pressure of 1 x 10-1 mbar and without post annealing. The effects of target substrate distance and electric current were investigated by XDR, FE-SEM, EDS, AFM, near infrared UV-Vis and four-prong probe measurements. The crystallinity of the ZnO films was improved by decreasing the distance from 11.7 cm to 5.0 cm and increasing the electric current. Grain size and mean square roughness increased with electric current. As the current increases from 0.1 to 0.3 A, the optical band range decreases from 3.92 to 3.38 eV. The lowest electrical resistivity of 2.18 x 10-1 Ω.cm is obtained 5.0 cm away from the target and with the electric current of 0.3 A. It was also evaluated the obtaining of TiO2 thin films in relation to the current and a TiO2 film was applied on the AZO film with lower electrical resistivity and the results indicated that the coating of the aluminum-doped zinc oxide particles by TiO2 thin film was applied.