Modelling the raman spectrum of the amorphous- crystal Si system
| dc.contributor.author | Carriço, Artur da Silva | |
| dc.contributor.author | Barrio, R. A. | |
| dc.contributor.author | Elliot, R. J. | |
| dc.date.accessioned | 2020-03-26T19:33:48Z | |
| dc.date.available | 2020-03-26T19:33:48Z | |
| dc.date.issued | 1986 | |
| dc.description.resumo | A model to calculate the Raman response of small Si crystallites immersed in an amorphous Si matrix is developed. The structure of the system is modelled by an infinite crystalline slab of varying width, in which the atoms on the (111) surfaces on both sides of the slab are attached to Bethe lattices. The Raman response is obtained from a simple polarisability model using the Green function technique. The results are compared with recent experiments. The model can be used for Si crystallites with free and hydrogenated (111) surfaces. | pt_BR |
| dc.identifier.citation | ELLIOT, R J; BARRIO, R. A.; CARRIÇO, Artur da Silva. Modelling the Raman spectrum of the amorphous-crystal Si system. Journal of Physics C: Solid State Physics, v. 19, n. 8, p. 1113-1122, 1986. Disponível em: http://iopscience.iop.org/article/10.1088/0022-3719/19/8/010/meta Acesso em 26.fev. 2018. | pt_BR |
| dc.identifier.doi | https://doi.org/10.1088/0022-3719/19/8/010 | |
| dc.identifier.uri | https://repositorio.ufrn.br/jspui/handle/123456789/28673 | |
| dc.language | en | pt_BR |
| dc.publisher | Institute of Physics (the “Institute”) and IOPscience | pt_BR |
| dc.publisher | IOP Publishing | pt_BR |
| dc.subject | Modelagem do espectro Raman do sistema Si-cristal amorfo | pt_BR |
| dc.title | Modelling the raman spectrum of the amorphous- crystal Si system | pt_BR |
| dc.type | article | pt_BR |
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