Model of electronic states at the Si-Si02 interface

Carriço, Artur da Silva; Barrio, R. A.; Elliot, R. J.

Model of electronic states at the Si-Si02 interface

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dc.contributor.author	Carriço, Artur da Silva
dc.contributor.author	Barrio, R. A.
dc.contributor.author	Elliot, R. J.
dc.date.accessioned	2020-03-26T20:58:03Z
dc.date.available	2020-03-26T20:58:03Z
dc.date.issued	1986-07-15
dc.description.resumo	The electronic properties of the interface between crystalline Si and its amorphous oxide SiO 2 have been studied within the tight-binding approximation by saturating the dangling bonds in three different surfaces (111), (110), and (100) of a semi-infinite Si crystal with SiO2 Bethe lattices. The localized states due to isolated dangling bonds in the interfaces (Pb centers) are found to be roughly at the same energy, in the Si gap for the (111) and (110) cases, but the (100) interface differs substantially from the other two. It is also found that the value of the site-energy interaction parameter on the Si defect site is important in determining the energy of the defect state.	pt_BR
dc.identifier.citation	CARRIÇO, Artur da Silva.; ELLIOTT, R. J.; BARRIO, R. A. Model of electronic states at the Si-SiO2 interface. Physical Review B - Condensed Matter and Materials Physics, v. 34, p. 872-878, 1986. Disponível em: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.34.872 Acesso: 26 mar. 2020.	pt_BR
dc.identifier.doi	https://doi.org/10.1103/PhysRevB.34.872
dc.identifier.issn	2469-9969 (online), 2469-9950 (print)
dc.identifier.uri	https://repositorio.ufrn.br/jspui/handle/123456789/28676
dc.language	en	pt_BR
dc.publisher	American Physical Society	pt_BR
dc.subject	Model of electronic states	pt_BR
dc.title	Model of electronic states at the Si-Si02 interface	pt_BR
dc.type	article	pt_BR